Nanoscale and device level electrical behavior of ALD annealed Hf-based gate stacks grown with different precursors

Authors

A. Bayerl, S. De Gendt, X. Aymerich, M. Nafría, M. Porti, L. Aguilera, y M. Lanza

Citation Key

314

COinS Data

Journal

Microelectronics Engineering

Year of Publication

2011