Accession Number
WOS:000350568900006
Authors
A. Pérez-Tomás, Y. Cordier, M. Nafría, M. Porti, S. Chenot, M. Chmielowska, M. Placidi, Y. K. Sharma, C. A. Fisher, M. Thomas, M. R. Jennings, P. M. Gammon, H. Chen, V. Iglesias, A. Fontsere, y G. Catalán
Citation Key
401
COinS Data

Date Published
20 MARCH 2015
DOI
10.1088/0957-4484/26/11/115203
ISBN Number
1361-6528
ISSN
0957-4484
Keywords
LIGHT-EMITTING-DIODES; MOLECULAR-BEAM EPITAXY; VAPOR-PHASE EPITAXY; ALGAN/GAN HEMTS; GALLIUM NITRIDE; GAN; GROWTH; DISLOCATIONS; SUBSTRATE; SCHOTTKY
Issue
11
Journal
NANOTECHNOLOGY
Type of Article
Article
URL
http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=2&SID=T2RNqQwde7r4jL3OUYv&page=1&doc=3
Volume
26
Year of Publication
2015