Accession Number
13399057
Authors
M. Lanza, G. Jing, H. Liang, Y. Zhang, Z. Liu, T. Gao, X. Aymerich, A. Bayerl, M. Nafría, M. Porti, H. Duan, y Y. Wang
Citation Key
398
COinS Data

Date Published
Feb 2013
DOI
10.1109/CDE.2013.6481394
ISBN Number
978-1-4673-4667-2
Keywords
capacitors, chemical vapor deposition, compressive strain, conductive channel, CVD, flat substrates, graphene layers, graphene-substrate adhesion, metal oxide semiconductor field effect, metallic electrodes, nanoscale morphology, rough substrates, strain-
Conference Location
Valladolid
Publisher
IEEE
Conference Name
Electron Device Spanish Conference (CDE)
URL
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6481394&queryText=nafria&sortType=desc_p_Publication_Year&searchField=Search_All
Year of Publication
2013