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- Accession Number
- 10800080
- Authors
- B. Kaczer, G. Groeseneken, P. J. Roussel, M. Aoulaiche, E. Simoen, J. Martín-Martínez, y T. Grasser
- Citation Key
- 369
- COinS Data
- DOI
- 10.1109/IRPS.2009.5173224
- ISBN Number
- 978-1-4244-2888-5
- ISBN
- 978-1-4244-2889-2
- Keywords
- CMOS technology, defect states, inverters, monitoring, NBTI relaxation, negative bias tempertaure instability, Noibium compunds, noiose measurement, noise, pFET reliability, poisson defect number statistics, poisson distribution, relaxation, reliability,
- Pagination
- 55-60
- Conference Location
- Montreal, Quebec, Canada
- Conference Name
- 2009 IEEE International Reliability Physics Symposium
- URL
- http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5173224
- Year of Conference
- 2009