Authors R. Rodríguez, X. Aymerich, J. Suñé, E. Miranda, y M. Nafría Citation Key 270 COinS Data Date Published 1999 Issue 7 Pagination 317-319 Journal IEEE Electron Device Letters Volume 20 Year of Publication 1999 ← A common framework for soft and hard breakdown in ultrathin gate oxides based on the theory of point contact conduction → Model-independent determination of the degradation dynamics of thin SiO2 films