Authors R. Fernández, X. Aymerich, M. Nafría, y R. Rodríguez Citation Key 236 COinS Data Date Published 2004 Pagination 1519-1522 Journal Microelectronics Reliability Volume 44 Year of Publication 2005 ← Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses → Ultra Thin Films of Atomic Force Microscopy Grown SiO2 as Gate Oxide on MOS Structures: Conduction and Breakdown Behavior