Authors M. Porti, X. Aymerich, M. Nafría, y S. Meli Citation Key 227 COinS Data Date Published 2005 Pagination 109-111 Journal IEEE Electron Device Letters Volume 26 (2) Year of Publication 2005 ← Electrical characterization at a nanometer scale of weak spots in irradiated SiO2 gate oxides → Conduction mechanisms and charge storage in Si-nanocrystals MOS memory devices studied with Conductive Atomic Force Microscopy