Accession Number
12047576
Authors
J. Martín-Martínez, G. Groeseneken, X. Aymerich, M. Nafría, R. Rodríguez, M. Toledano-Luque, y B. Kaczer
Citation Key
364
COinS Data

DOI
10.1109/IRPS.2011.5784605
ISBN Number
978-1-4244-9113-1
ISBN
978-1-4244-9111-7
Keywords
AC stress, charge carrier preocesses, charge/discharge, CMOS, DC stress, electri discharges, failure analysis, failure mechanisms, logic gates, modeling, Monte Carlo simulation, MOSFET, NBTI, NBTI degradation, NBTI model, negative bias temperature instabi
Pagination
XT.4.1-XT.4.6
Conference Location
Monterey, California, USA
Conference Name
2011 IEEE International Reliability Physics Symposium (IRPS)
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5784605
Year of Conference
2011