Authors
A. Bayerl, X. Aymerich, M. Nafría, F. Campabadal, M. Porti, y M. Lanza
Citation Key
313
COinS Data

Date Published
JUL 2011
DOI
10.1016/j.mee.2011.03.122
ISBN Number
790FA
ISSN
0167-9317
Keywords
MOS devices; Atomic Force Microscopy; Reliability; Variability; High-k dielectric; High-k crystallization
Issue
7
Pagination
1334-1337
Journal
Microelectronics Engineering
Start Page
1334
Type of Article
Article; Proceedings Paper
URL
http://www.sciencedirect.com/science/article/pii/S0167931711003819
Volume
88
Year of Publication
2011