Accession Number
11626328
Authors
A. Crespo-Yepes, A. Rothschild, X. Aymerich, M. Nafría, R. Rodríguez, y J. Martín-Martínez
Citation Key
319
COinS Data

Date Published
SEP 2010
DOI
10.1109/ESSDERC.2010.5618448
ISBN Number
978-1-4244-6658-0
Keywords
conductive path, Dielectric Breakdown, gate dielectric breakdown reversibility, Hf, high-k dielectric, MOSFET, resistive switching-like behaviour, ultra-thin HF based gate stacks
Conference Location
Sevilla
Conference Name
Solid-State Device Research Conference (ESSDERC)
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5618448
Year of Publication
2010