Authors E. Miranda, F. Campabadal, L. Fonseca, X. Aymerich, M. Nafría, R. Rodríguez, y J. Suñé Citation Key 259 COinS Data Date Published 2000 Pagination 82-89 Journal IEEE Transactions on Electron Devices Volume 47 Year of Publication 2000 ← Failure physics of ultra-thin SiO2 gate oxides near their scaling limit → Conduction properties of breakdown paths in ultrathin gate oxides