Accession Number
13135513
Authors
N. Ayala, X. Aymerich, M. Nafría, R. Rodríguez, y J. Martín-Martínez
Citation Key
358
COinS Data

Date Published
2012
DOI
10.1109/ESSDERC.2012.6343384
ISBN Number
978-1-4673-1707-8
ISBN
978-1-4673-1706-1
Keywords
bias temperature instability, BTI physics-based model, circuit performance, circuit simulation, Discharges, discrete threshold voltage shift, logic gates, MOSFET, RTN, SRAM cells performance, SRAM chips, stochastic processes, Temeprature dependence, varia
Pagination
266-269
Conference Location
Bordeaux, France
Conference Name
2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6343384
Year of Conference
2012